Significant sensitivity enhancement of single crystal CdSe x-ray detector by liquid nitrogen cooling

Owing to the large x-ray attenuation coefficient, appropriate bandgap, high resistivity, and mobility-lifetime (μτ) product, binary II–VI semiconductor CdSe is a promising detection material it has exhibited excellent at room temperature (RT). For further improving characteristics of detectors, electrical properties single crystals (SCs) grown through pressure-assisted vertical Bridgman method their performance have been investigated RT liquid nitrogen (LNT), respectively. The significantly enhanced photocurrent prolonged response time devices operating LNT indicate photogenerated carrier lifetime could be increased by trapping–detrapping effect obviously, μτ product SCs increases from 1.39 × 10−5 5.34 10−4 cm2 V−1 with lowering LNT. Meanwhile, an ultrahigh sensitivity 5.24 106μC Gyair−1 cm−2 extremely low limit 3.68 nGyair s−1 acquired SC based detectors LNT, which 140 times higher 5.8 lower than RT. Compared conventional ultra-high make application prospects very promising.